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          大功率分立器件

          峰值功率20W-1000W; 工作頻率10MHz-6GHz;基于自主知識產權的28V,50V ,65V和500V LDMOS和GaN工藝平臺開發 全國產供應; 封裝材料自主開發設計,具有低成本、高可靠性。

          • Min. Freq.(MHz)
            700
            3000
            6000
          • Max. Freq.(MHz)
            1000
            2000
            3000
          • VDD(V)
            18
            28
          • Pavg(dBm)
            18
            4
          • ACPR
            -47.1
            -48
            -49.5
            -48.9
            -47
            -46.3
            -44.5
            -45
            -35
            -25
          • Test?Freq.(MHz)
            3400
            2140
            2600
            3450
            184
            940
            881
            1840
            1960
            945
            780
            2140
          • MP?Status
            MP
          • Package
            PDFN5*5
            TO270
            ACC2110S-2L2L
            ACS2110S-4L
          • Process
            LDMOS

          顯示6種產品

          產品型號
          Min. Freq.(MHz)
          Max. Freq.(MHz)
          VDD(V)
          Pavg(dBm)
          DE@Pavg
          Gain(dB)
          ACPR
          Test?Freq.(MHz)
          MP?Status
          Package
          Process
          HTH8G09P550S 700960484953.40%20.4-28.8758MPACC2110S-4LLDMOS
          HTH9G09P550S 70096048495420-25945MPACS2110S-4LLDMOS
          HTH9G09P700S 7588034850.55619.5-25780MPACS3210S-4LLDMOS
          HTN9G22P370S 1805NA2847.34816-302140MPACS2110LDMOS
          HTN7G21S040P(G) 7002100283615.40%15.4-481800MPTO-270LDMOS
          HTN7G38S007P 70038002828.817.414.2-47.13400MPPDFN5*5LDMOS
          HTN8G27S015P 700270028301220.2-49.52600MPPDFN5*5LDMOS
          HTN8G36S015P 33003600283011.918.2-48.93450MPPDFN5*5LDMOS
          HTN9G49S007P 480049002428.815%15.2-454800MPDFN5x5LDMOS
          HTN7G09S060P 100960283919.521.8-46.3940MPTO270LDMOS
          HTH1D27P550S 24962690484956.30%15.7-26.82496MPACS2110S-4L2LGaN
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